SC5094 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for low noise amplifier at vhf, uhf and catv band. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo 18 v collector-emitter voltage vceo 10 v emitter-base voltage vebo 2.5 v collector current ic 20 ma total power dissipation pd 150 mw junction temperature tj +125 oc storage temperature tstg -50 to +125 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector cutoff current icbo - - 1 ma vcb =3v emitter cutoff current iebo - - 1 ma veb =1v dc current gain(1) hfe 50 80 160 - ic=1ma, vce=2v transition frequency ft - 7.6 - ghz ic=10ma, vce =1v - 9 - ghz ic=12ma, vce =3v minimum noise figure nfmin - 1.4 - db ic=4.2ma, vce =2v, f=0.9ghz - 1.6 - db ic=4.5ma, vce =5v, f=0.9ghz associated gain ga - 12 - db ic=4.2ma, vce =2v, f=0.9ghz - 13.5 - db ic=4.5ma, vce =5v, f=0.9ghz insertion gain s21 2 in 50w system s21 2 - 12.8 - db ic=4.2ma, vce =2v, f=0.9ghz - 13.5 - db ic=4.5ma, vce =5v, f=0.9ghz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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